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 TIS97
Discrete POWER & Signal Technologies
TIS97
E
BC
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
40 40 6.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TIS97 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
TIS97
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector Cutoff Current Emitter Cutoff Current I C = 10 mA, I B = 0 VCB = 40 V, IE = 0 VCB = 60 V, IE = 0 VEB = 6.0 V, I C = 0 40 10 10 20 V nA A nA
ON CHARACTERISTICS*
hFE VBE(on) DC Current Gain Base-Emitter On Voltage VCE = 5.0 V, I C = 100 A VCE = 5.0 V, I C = 100 A 250 0.45 700 0.65 V
SMALL SIGNAL CHARACTERISTICS
Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz I C = 100 A, VCE = 5.0 V, f = 1.0 kHz I C = 10 mA, VCE = 5.0 V, f = 100 MHz VCE = 5.0 V, IC = 30 A, Rg = 10 k, f = 1.0 kHz, BW = 100 Hz VCE = 5.0 V, IC = 100 A, Rg = 10 k, BW = 15.7 kHz 250 2.0 1.0 4.0 16 800 pF pF
NF
Noise Figure
2.0 3.0
dB dB
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%


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